Showing 41-60 of 64,459 items.
ImagePart NumberDescriptionIn StockQuantity
IRF4905PBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 55V 74A TO-220AB
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 20mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 3400pF @ 25V
  • Power Dissipation (Max) : 200W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
62590
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SISS26LDN-T1-GE3
Vishay Siliconix
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 81.2A PP 1212-8S
  • Manufacturer : Vishay Siliconix
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchFET® Gen IV
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 23.7A (Ta), 81.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 4.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1980pF @ 30V
  • Power Dissipation (Max) : 4.8W (Ta), 57W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : PowerPAK® 1212-8S
  • Package / Case : PowerPAK® 1212-8S
139
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RSR010N10TL
Rohm Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 1.0A TSMT3
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
  • Rds On (Max) @ Id, Vgs : 520mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 5V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V
  • Power Dissipation (Max) : 540mW (Ta)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TSMT3
  • Package / Case : SC-96
9101
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FSB560A
ON Semiconductor
Transistors-Bipolar (BJT) - Single
TRANS NPN 60V 2A SSOT-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Current - Collector (Ic) (Max) : 2A
  • Voltage - Collector Emitter Breakdown (Max) : 60V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 200mA, 2A
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 500mA, 2V
  • Power - Max : 500mW
  • Frequency - Transition : 75MHz
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : 3-SSOT
24688
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TK2P60D(TE16L1,NQ)
Toshiba Semiconductor and Storage
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 600V 2A PW-MOLD
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : π-MOSVII
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 4.3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id : 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 25V
  • Power Dissipation (Max) : 60W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : PW-MOLD
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
304
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MMDT2907A-7-F
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays
TRANS 2PNP 60V 0.6A SOT363
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP (Dual)
  • Current - Collector (Ic) (Max) : 600mA
  • Voltage - Collector Emitter Breakdown (Max) : 60V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max) : 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 150mA, 10V
  • Power - Max : 200mW
  • Frequency - Transition : 200MHz
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
14187
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AO4614B_101
Alpha & Omega Semiconductor
Transistors-FETs, MOSFETs - Arrays
MOSFET N/P-CH 40V 6A/5A 8SOIC
  • Manufacturer : Alpha & Omega Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N and P-Channel
  • FET Feature : Logic Level Gate
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 6A, 5A
  • Rds On (Max) @ Id, Vgs : 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 20V
  • Power - Max : 2W
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package : 8-SO
195
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BDP950H6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Single
TRANS PNP 60V 3A SOT223
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP
  • Current - Collector (Ic) (Max) : 3A
  • Voltage - Collector Emitter Breakdown (Max) : 60V
  • Vce Saturation (Max) @ Ib, Ic : 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 85 @ 500mA, 1V
  • Power - Max : 5W
  • Frequency - Transition : 100MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-261-4, TO-261AA
  • Supplier Device Package : PG-SOT223-4
369
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PBSS5350T,215
Nexperia
Transistors-Bipolar (BJT) - Single
TRANS PNP 50V 2A SOT23
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP
  • Current - Collector (Ic) (Max) : 2A
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 390mV @ 300mA, 3A
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1A, 2V
  • Power - Max : 540mW
  • Frequency - Transition : 100MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : TO-236AB
314
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MJE340G
ON Semiconductor
Transistors-Bipolar (BJT) - Single
TRANS NPN 300V 0.5A TO225AA
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 300V
  • Current - Collector Cutoff (Max) : 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 50mA, 10V
  • Power - Max : 20W
  • Operating Temperature : -65°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-225AA, TO-126-3
  • Supplier Device Package : TO-225AA
3940
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PBSS4350T,215
Nexperia
Transistors-Bipolar (BJT) - Single
TRANS NPN 50V 2A SOT23
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Current - Collector (Ic) (Max) : 2A
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 370mV @ 300mA, 3A
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1A, 2V
  • Power - Max : 540mW
  • Frequency - Transition : 100MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : TO-236AB
24336
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ULN2003ANSR
Texas Instruments
Transistors-Bipolar (BJT) - Arrays
IC PWR RELAY 7NPN 1:1 16SO
  • Manufacturer : Texas Instruments
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 7 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max) : 50µA
  • Operating Temperature : -20°C ~ 70°C (TA)
  • Mounting Type : Surface Mount
  • Package / Case : 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package : 16-SO
3671
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CSD18543Q3AT
Texas Instruments
Transistors-FETs, MOSFETs - Single
60V N-CHANNEL NEXFET POWER MOSF
  • Manufacturer : Texas Instruments
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : NexFET™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 15.6mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id : 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 30V
  • Power Dissipation (Max) : 66W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 8-VSON (3.3x3.3)
  • Package / Case : 8-PowerVDFN
49608
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ULN2003ADR
Texas Instruments
Transistors-Bipolar (BJT) - Arrays
IC PWR RELAY 7NPN 1:1 16SOIC
  • Manufacturer : Texas Instruments
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 7 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max) : 50µA
  • Operating Temperature : -20°C ~ 70°C (TA)
  • Mounting Type : Surface Mount
  • Package / Case : 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package : 16-SOIC
278630
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TIP32C
ON Semiconductor
Transistors-Bipolar (BJT) - Single
TRANS PNP 100V 3A TO220AB
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP
  • Current - Collector (Ic) (Max) : 3A
  • Voltage - Collector Emitter Breakdown (Max) : 100V
  • Vce Saturation (Max) @ Ib, Ic : 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max) : 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 10 @ 3A, 4V
  • Power - Max : 2W
  • Frequency - Transition : 3MHz
  • Operating Temperature : -65°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-220-3
  • Supplier Device Package : TO-220AB
370
More on Order
ZXMN6A07FTA
Diodes Incorporated
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 1.2A SOT23-3
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 250mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
  • Power Dissipation (Max) : 625mW (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3
  • Package / Case : TO-236-3, SC-59, SOT-23-3
224371
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AO3422
Alpha & Omega Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 2.1A SOT23
  • Manufacturer : Alpha & Omega Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs : 160mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id : 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 3.3nC @ 4.5V
  • Vgs (Max) : ±12V
  • Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
  • Power Dissipation (Max) : 1.25W (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3L
  • Package / Case : TO-236-3, SC-59, SOT-23-3
818417
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ULN2003AN
Texas Instruments
Transistors-Bipolar (BJT) - Arrays
IC PWR RELAY 7NPN 1:1 16DIP
  • Manufacturer : Texas Instruments
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 7 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max) : 50µA
  • Operating Temperature : -20°C ~ 70°C (TA)
  • Mounting Type : Through Hole
  • Package / Case : 16-DIP (0.300", 7.62mm)
  • Supplier Device Package : 16-PDIP
9961
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CSD17573Q5B
Texas Instruments
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 100A 8VSON
  • Manufacturer : Texas Instruments
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : NexFET™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id : 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 64nC @ 4.5V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 9000pF @ 15V
  • Power Dissipation (Max) : 3.2W (Ta), 195W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 8-VSON-CLIP (5x6)
  • Package / Case : 8-PowerTDFN
25345
More on Order
ZXMP10A13FTA
Diodes Incorporated
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 100V 0.6A SOT23-3
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
  • Rds On (Max) @ Id, Vgs : 1Ohm @ 600mA, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 141pF @ 50V
  • Power Dissipation (Max) : 625mW (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3
  • Package / Case : TO-236-3, SC-59, SOT-23-3
414997
More on Order
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