Transistors

Showing 61-80 of 64,459 items.

Part Number	Description	In Stock
ZXMP10A13FTA Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 0.6A SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V Rds On (Max) @ Id, Vgs : 1Ohm @ 600mA, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 141pF @ 50V Power Dissipation (Max) : 625mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 Package / Case : TO-236-3, SC-59, SOT-23-3	414997 More on Order
NTR4101PT1G ON Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A SOT-23 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 20V Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V Rds On (Max) @ Id, Vgs : 85mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id : 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 4.5V Vgs (Max) : ±8V Input Capacitance (Ciss) (Max) @ Vds : 675pF @ 10V Power Dissipation (Max) : 420mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 (TO-236) Package / Case : TO-236-3, SC-59, SOT-23-3	118533 More on Order
FDC6420C ON Semiconductor	Transistors-FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 3A/2.2A SSOT-6 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Series : PowerTrench® FET Type : N and P-Channel FET Feature : Logic Level Gate Drain to Source Voltage (Vdss) : 20V Current - Continuous Drain (Id) @ 25°C : 3A, 2.2A Rds On (Max) @ Id, Vgs : 70mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id : 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 10V Power - Max : 700mW Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : SOT-23-6 Thin, TSOT-23-6 Supplier Device Package : SuperSOT™-6	58997 More on Order
BSP51,115 Nexperia	Transistors-Bipolar (BJT) - Single TRANS NPN DARL 60V 1A SOT223 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : NPN - Darlington Current - Collector (Ic) (Max) : 1A Voltage - Collector Emitter Breakdown (Max) : 60V Vce Saturation (Max) @ Ib, Ic : 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max) : 50nA DC Current Gain (hFE) (Min) @ Ic, Vce : 2000 @ 500mA, 10V Power - Max : 1.25W Frequency - Transition : 200MHz Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-261-4, TO-261AA Supplier Device Package : SC-73	389 More on Order
STW4N150 STMicroelectronics	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 4A TO-247 Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : PowerMESH™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 7Ohm @ 2A, 10V Vgs(th) (Max) @ Id : 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V Power Dissipation (Max) : 160W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3	3635 More on Order
SGP15N60XKSA1 Infineon Technologies	Transistors-IGBTs - Single IGBT 600V 31A 139W TO220-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 31A Current - Collector Pulsed (Icm) : 62A Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 15A Power - Max : 139W Switching Energy : 570µJ Input Type : Standard Gate Charge : 76nC Td (on/off) @ 25°C : 32ns/234ns Test Condition : 400V, 15A, 21Ohm, 15V Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-220-3 Supplier Device Package : PG-TO220-3	450 More on Order
NDS8410 Texas Instruments	Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8-SOIC Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V Vgs (Max) : 20V Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 15V Power Dissipation (Max) : 2.5W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-SOIC Package / Case : 8-SOIC (0.154", 3.90mm Width)	456 More on Order
NTMD5838NLR2G ON Semiconductor	Transistors-FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 7.4A 8SOIC Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : 2 N-Channel (Dual) FET Feature : Logic Level Gate Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 7.4A Rds On (Max) @ Id, Vgs : 25mOhm @ 7A, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds : 785pF @ 20V Power - Max : 2.1W Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 8-SOIC (0.154", 3.90mm Width) Supplier Device Package : 8-SOIC	194 More on Order
ZXM64P03XTA Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET P-CH 30V 3.8A 8-MSOP Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 75mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 825pF @ 25V Power Dissipation (Max) : 1.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-MSOP Package / Case : 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	2940 More on Order
STH3N150-2 STMicroelectronics	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A H2PAK-2 Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : PowerMESH™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id : 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 29.3nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 939pF @ 25V Power Dissipation (Max) : 140W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : H²PAK Package / Case : TO-263-3, D²Pak (2 Leads + Tab) Variant	7797 More on Order
PBSS5240T,215 Nexperia	Transistors-Bipolar (BJT) - Single TRANS PNP 40V 2A SOT23 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP Current - Collector (Ic) (Max) : 2A Voltage - Collector Emitter Breakdown (Max) : 40V Vce Saturation (Max) @ Ib, Ic : 350mV @ 200mA, 2A Current - Collector Cutoff (Max) : 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce : 210 @ 1A, 2V Power - Max : 480mW Frequency - Transition : 200MHz Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : TO-236AB	3637 More on Order
IRF1407PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 130A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 75V Current - Continuous Drain (Id) @ 25°C : 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 7.8mOhm @ 78A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 250nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 5600pF @ 25V Power Dissipation (Max) : 330W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	2668 More on Order
IRF9Z34NPBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET P-CH 55V 19A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 100mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V Power Dissipation (Max) : 68W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	18756 More on Order
SI2300DS-T1-GE3 Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 3.6A SOT-23 Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V Rds On (Max) @ Id, Vgs : 68mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id : 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V Vgs (Max) : ±12V Input Capacitance (Ciss) (Max) @ Vds : 320pF @ 15V Power Dissipation (Max) : 1.1W (Ta), 1.7W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 (TO-236) Package / Case : TO-236-3, SC-59, SOT-23-3	115120 More on Order
IRLL014NTRPBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 2A SOT223 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 140mOhm @ 2A, 10V Vgs(th) (Max) @ Id : 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V Vgs (Max) : ±16V Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 25V Power Dissipation (Max) : 1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : TO-261-4, TO-261AA	43528 More on Order
IRF2807PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 82A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 75V Current - Continuous Drain (Id) @ 25°C : 82A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 13mOhm @ 43A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 3820pF @ 25V Power Dissipation (Max) : 230W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	2191 More on Order
IRF9540PBF Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 19A TO-220AB Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 200mOhm @ 11A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 61nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V Power Dissipation (Max) : 150W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	3850 More on Order
SI7850DP-T1-GE3 Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 6.2A PPAK SO-8 Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 22mOhm @ 10.3A, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V Vgs (Max) : ±20V Power Dissipation (Max) : 1.8W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PowerPAK® SO-8 Package / Case : PowerPAK® SO-8	24823 More on Order
DDTD123YU-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SOT-323	336 More on Order
DDTD123EU-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SOT-323	279 More on Order