Bipolar (BJT) - Arrays, Pre-Biased

Showing 241-260 of 1,584 items.

Part Number	Description	In Stock
RN2706JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	319 More on Order
RN1506(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74A, SOT-753 Supplier Device Package : SMV	391 More on Order
RN49A1(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	279 More on Order
RN4911(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	348 More on Order
RN4910(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	262 More on Order
RN4909(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	143 More on Order
RN4908(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	159 More on Order
RN4907(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	250 More on Order
RN4904(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	357 More on Order
RN4903(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	369 More on Order
RN4901(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz, 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	209 More on Order
RN2911(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	409 More on Order
RN2910(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	339 More on Order
RN2909(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	418 More on Order
RN2908(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	457 More on Order
RN2907(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	477 More on Order
RN2906(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	362 More on Order
RN2904(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	376 More on Order
RN2902(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	351 More on Order
RN2901(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	249 More on Order