Bipolar (BJT) - Arrays, Pre-Biased

Showing 281-300 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
RN1906FE(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.1W ES6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : ES6
395
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RN4988(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100µA (ICBO)
  • Frequency - Transition : 250MHz, 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
203
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RN4981,LF(CT
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100µA (ICBO)
  • Frequency - Transition : 250MHz, 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
297
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RN1961FE(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.1W ES6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : ES6
472
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RN1906(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
191
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RN2702TE85LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.2W USV
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : USV
287
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FMG9AT248
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.3W SMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74A, SOT-753
  • Supplier Device Package : SMT5
182
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NSVB143TPDXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT563
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 357mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
279
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NSVB123JPDXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
120
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PBLS4004V,115
NXP
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP SOT666
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 40V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max) : 1µA
  • Frequency - Transition : 300MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-666
192
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PBLS4002V,115
NXP
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP SOT666
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 40V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max) : 1µA
  • Frequency - Transition : 300MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-666
223
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PBLS2002S,115
NXP
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 1.5W 8SO
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 3A
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 150 @ 2A, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
  • Current - Collector Cutoff (Max) : 1µA, 100nA
  • Frequency - Transition : 100MHz
  • Power - Max : 1.5W
  • Mounting Type : Surface Mount
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package : 8-SO
464
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PBLS2001S,115
NXP
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 1.5W 8SO
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 3A
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V / 150 @ 2A, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
  • Current - Collector Cutoff (Max) : 1µA, 100nA
  • Frequency - Transition : 100MHz
  • Power - Max : 1.5W
  • Mounting Type : Surface Mount
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package : 8-SO
363
More on Order
BCR 48PN H6727
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 70mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 100MHz, 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
279
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BCR 22PN H6727
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
131
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BCR 148S H6827
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 100MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
319
More on Order
BCR 141S H6727
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
184
More on Order
BCR 141S E6727
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
123
More on Order
BCR 133S H6444
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
169
More on Order
BCR 116S H6727
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
172
More on Order
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