| RN1906FE(T5L,F,T) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 100mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : ES6
| 395 More on Order |
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| RN4988(T5L,F,T) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100µA (ICBO)
- Frequency - Transition : 250MHz, 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : US6
| 203 More on Order |
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| RN4981,LF(CT Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100µA (ICBO)
- Frequency - Transition : 250MHz, 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : US6
| 297 More on Order |
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| RN1961FE(TE85L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 100mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : ES6
| 472 More on Order |
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| RN1906(T5L,F,T) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : US6
| 191 More on Order |
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| RN2702TE85LF Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W USV - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : USV
| 287 More on Order |
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| FMG9AT248 Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74A, SOT-753
- Supplier Device Package : SMT5
| 182 More on Order |
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| NSVB143TPDXV6T1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT563 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 357mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 279 More on Order |
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| NSVB123JPDXV6T1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 500mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 120 More on Order |
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| PBLS4004V,115 NXP | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT666 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V, 40V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) : 1µA
- Frequency - Transition : 300MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-666
| 192 More on Order |
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| PBLS4002V,115 NXP | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT666 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V, 40V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) : 1µA
- Frequency - Transition : 300MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-666
| 223 More on Order |
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| PBLS2002S,115 NXP | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 1.5W 8SO - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 3A
- Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 150 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 100MHz
- Power - Max : 1.5W
- Mounting Type : Surface Mount
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package : 8-SO
| 464 More on Order |
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| PBLS2001S,115 NXP | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 1.5W 8SO - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 3A
- Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V / 150 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 100MHz
- Power - Max : 1.5W
- Mounting Type : Surface Mount
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package : 8-SO
| 363 More on Order |
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| BCR 48PN H6727 Infineon Technologies | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 70mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms, 2.2kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 100MHz, 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : 6-VSSOP, SC-88, SOT-363
- Supplier Device Package : PG-SOT363-6
| 279 More on Order |
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| BCR 22PN H6727 Infineon Technologies | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 130MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : 6-VSSOP, SC-88, SOT-363
- Supplier Device Package : PG-SOT363-6
| 131 More on Order |
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| BCR 148S H6827 Infineon Technologies | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 100MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : 6-VSSOP, SC-88, SOT-363
- Supplier Device Package : PG-SOT363-6
| 319 More on Order |
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| BCR 141S H6727 Infineon Technologies | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 130MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : 6-VSSOP, SC-88, SOT-363
- Supplier Device Package : PG-SOT363-6
| 184 More on Order |
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| BCR 141S E6727 Infineon Technologies | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 130MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : 6-VSSOP, SC-88, SOT-363
- Supplier Device Package : PG-SOT363-6
| 123 More on Order |
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| BCR 133S H6444 Infineon Technologies | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 130MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : 6-VSSOP, SC-88, SOT-363
- Supplier Device Package : PG-SOT363-6
| 169 More on Order |
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| BCR 116S H6727 Infineon Technologies | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 150MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : 6-VSSOP, SC-88, SOT-363
- Supplier Device Package : PG-SOT363-6
| 172 More on Order |
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