Bipolar (BJT) - Arrays, Pre-Biased

Showing 341-360 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
MUN5216DW1T1
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
173
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MUN5212DW1T1
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
294
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MUN5135DW1T1
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
135
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MUN5134DW1T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
274
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MUN5131DW1T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
442
More on Order
MUN5116DW1T1
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
305
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MUN5114DW1T1
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
211
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MUN5112DW1T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88/SC70-6/SOT-363
451
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IMH20TR1
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.3W SC74R
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 600mA
  • Voltage - Collector Emitter Breakdown (Max) : 15V
  • Resistor - Base (R1) : 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package : SC-74R
270
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EMG2DXV5T5
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.23W SOT553
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 230mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-553
  • Supplier Device Package : SOT-553
339
More on Order
EMG2DXV5T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.23W SOT553
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 230mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-553
  • Supplier Device Package : SOT-553
183
More on Order
EMG2DXV5T1
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.23W SOT553
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 230mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-553
  • Supplier Device Package : SOT-553
451
More on Order
EMF5XV6T5
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 0.5W SOT56
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 12V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 270 @ 10mA, 2V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
207
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EMA6DXV5T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.23W SOT553
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 230mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-553
  • Supplier Device Package : SOT-553
137
More on Order
BCR08PNE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 170MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
158
More on Order
BCR48PNE6433BTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 70mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 100MHz, 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
141
More on Order
BCR48PNE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 70mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 100MHz, 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
499
More on Order
BCR35PNE6433HTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
422
More on Order
BCR35PNE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
450
More on Order
BCR22PNE6433HTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
280
More on Order
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