Bipolar (BJT) - Arrays, Pre-Biased

Showing 361-380 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
BCR22PNE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
218
More on Order
BCR198SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 190MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
314
More on Order
BCR185SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
230
More on Order
BCR185SB6327XT
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
225
More on Order
BCR183SE6433BTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
204
More on Order
BCR183SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
383
More on Order
BCR169SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 200MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
216
More on Order
BCR148SE6433HTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 100MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
194
More on Order
BCR148SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 100MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
333
More on Order
BCR141SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
268
More on Order
BCR135SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
459
More on Order
BCR133SE6433BTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
387
More on Order
BCR133SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
211
More on Order
BCR133SB6327XT
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
459
More on Order
BCR129SE6327HTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
111
More on Order
BCR119SE6433HTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
111
More on Order
BCR119SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
333
More on Order
BCR116SE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.25W SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
322
More on Order
BCR10PNE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
489
More on Order
BCR10PNB6327XT
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT363
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 130MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package : PG-SOT363-6
462
More on Order
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