Bipolar (BJT) - Arrays, Pre-Biased

Showing 701-720 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
DDC142JH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 470Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
127
More on Order
DDC122TH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 220Ohms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
450
More on Order
DDC122LH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 220Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
357
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DDA142TH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 470Ohms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
134
More on Order
DDA142JH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 470Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
439
More on Order
DDA122TH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 220Ohms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
243
More on Order
DDA122LH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 220Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
100
More on Order
DCX142TH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 470Ohms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
497
More on Order
DCX142JH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 470Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
386
More on Order
DCX122TH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 220Ohms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
384
More on Order
DCX122LH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 220Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
420
More on Order
BCR523UE6433HTMA1
Infineon Technologies
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.33W SC74
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Frequency - Transition : 100MHz
  • Power - Max : 330mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : PG-SC74-6
414
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UMG7NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W UMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : UMT5
423
More on Order
EMF24T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/NPN 0.15W EMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max) : 100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 180 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 180MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : EMT6
423
More on Order
EMF17T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 0.15W EMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 20mA, 5V / 180 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 140MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : EMT6
110
More on Order
EMA11T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.15W EMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package : EMT5
265
More on Order
EMB9T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.15W EMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : EMT6
417
More on Order
EMB4T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.15W EMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : EMT6
190
More on Order
EMG1T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W EMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package : EMT5
103
More on Order
EMA8T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP EMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package : EMT5
216
More on Order
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