Bipolar (BJT) - Arrays, Pre-Biased

Showing 781-800 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
PEMH7,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.3W SOT666
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-666
367
More on Order
PEMD30,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT666
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-666
394
More on Order
PEMH24,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.3W SOT666
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 100kOhms
  • Resistor - Emitter Base (R2) : 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-666
255
More on Order
UMC3NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.15W UMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : UMT5
293
More on Order
UMA6NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP UMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : UMT5
231
More on Order
UMF28NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 0.15W UMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V / 180 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 140MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : UMT6
489
More on Order
UMB4NTN
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP UMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : UMT6
206
More on Order
UMG6NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W UMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : UMT5
186
More on Order
UMB1NTN
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP UMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : UMT6
315
More on Order
NSBC115EPDXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
SS SOT563 RSTR XSTR TR
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : Automotive, AEC-Q101
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 100kOhms
  • Resistor - Emitter Base (R2) : 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 357mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
385
More on Order
DCX124EUQ-7-F
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP 50V SOT363
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : Automotive, AEC-Q101
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
390
More on Order
RN4987,LF(CT
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
374
More on Order
RN4984,LF(CT
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
303
More on Order
RN4983,LF(CT
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
402
More on Order
RN4905,LF(CT
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
387
More on Order
ADC144EUQ-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
PREBIAS TRANSISTOR SOT363 T&R 3K
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : Automotive, AEC-Q101
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 270mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
331
More on Order
ADC143TUQ-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
PREBIAS TRANSISTOR SOT363 T&R 3K
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : Automotive, AEC-Q101
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 2.5mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 270mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
384
More on Order
EMA3T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.15W
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package : EMT5
129
More on Order
EMG3T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W EMT3
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : EMT3
411
More on Order
EMA4T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.15W EMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package : EMT5
364
More on Order
Contact Us
Mobile
0086-18126093116
Email
susan@yixincomponents.com
Whatsapp
+86-18126093116
Skype
susan@yixincomponents.com
Wechat
yixincomponents
QQ
50089644
Message
Leave Your Message
Telephone
0086-0755-23616837