Bipolar (BJT) - Arrays, Pre-Biased

Showing 1,001-1,020 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
XN0F25600L
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL NPN MINI6
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 600mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-23-6
  • Supplier Device Package : MINI6-G1
467
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EMD30T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA, 200mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 30V
  • Resistor - Base (R1) : 10kOhms, 1kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 140 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 260MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : EMT6
125
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EMD5T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms, 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V / 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : EMT6
322
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IMD6AT108
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.3W SMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SMT6
250
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DCX143TU-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT363
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 2.5mA
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
367
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UMH8NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W UMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : UMT6
329
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DMA564070R
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SMINI6
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD, Flat Leads
  • Supplier Device Package : SMini6-F3-B
430
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DMA566050R
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SMINI6
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD, Flat Leads
  • Supplier Device Package : SMini6-F3-B
399
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PBLS2021D,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 6TSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 1.8A
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V / 200 @ 1A, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
  • Current - Collector Cutoff (Max) : 1µA, 100nA
  • Frequency - Transition : 130MHz
  • Power - Max : 760mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : 6-TSOP
266
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PBLS6023D,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 6TSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 1.5A
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 60V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 140 @ 1A, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A
  • Current - Collector Cutoff (Max) : 1µA, 100nA
  • Frequency - Transition : 150MHz
  • Power - Max : 760mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : 6-TSOP
124
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IMH6AT108
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL NPN SMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SMT6
210
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PBLS2022D,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PNP PREBIAS/PNP 6TSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 PNP Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 1.8A
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 200 @ 1A, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
  • Current - Collector Cutoff (Max) : 1µA, 100nA
  • Frequency - Transition : 130MHz
  • Power - Max : 760mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : 6-TSOP
196
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DCX100NS-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 50mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms, 1kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 33 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
337
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NSVIMD10AMT1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
SURF MT BIASED RES XSTR
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : Automotive, AEC-Q101
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 13kOhms, 130Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V / 68 @ 100mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 285mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package : SC-74R
299
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NSBC114TDXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.5W SOT563
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
280
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RN2606(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.3W SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
203
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RN4609(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.3W SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
456
More on Order
RN1610(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.3W SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
396
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RN1508(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.3W SMV
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74A, SOT-753
  • Supplier Device Package : SMV
422
More on Order
RN2605(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.3W SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
328
More on Order
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