| XN0F25600L Panasonic Electronic Components | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN MINI6 - Manufacturer : Panasonic Electronic Components
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 600mA
- Voltage - Collector Emitter Breakdown (Max) : 20V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SOT-23-6
- Supplier Device Package : MINI6-G1
| 467 More on Order |
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| EMD30T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA, 200mA
- Voltage - Collector Emitter Breakdown (Max) : 50V, 30V
- Resistor - Base (R1) : 10kOhms, 1kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 140 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz, 260MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 125 More on Order |
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| EMD5T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms, 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms, 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V / 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 322 More on Order |
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| IMD6AT108 Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W SMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SMT6
| 250 More on Order |
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| DCX143TU-7 Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 2.5mA
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : SOT-363
| 367 More on Order |
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| UMH8NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W UMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 500nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : UMT6
| 329 More on Order |
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| DMA564070R Panasonic Electronic Components | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 - Manufacturer : Panasonic Electronic Components
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-SMD, Flat Leads
- Supplier Device Package : SMini6-F3-B
| 430 More on Order |
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| DMA566050R Panasonic Electronic Components | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 - Manufacturer : Panasonic Electronic Components
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-SMD, Flat Leads
- Supplier Device Package : SMini6-F3-B
| 399 More on Order |
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| PBLS2021D,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 1.8A
- Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V / 200 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 130MHz
- Power - Max : 760mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : 6-TSOP
| 266 More on Order |
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| PBLS6023D,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 1.5A
- Voltage - Collector Emitter Breakdown (Max) : 50V, 60V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 140 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 150MHz
- Power - Max : 760mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : 6-TSOP
| 124 More on Order |
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| IMH6AT108 Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SMT6
| 210 More on Order |
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| PBLS2022D,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PNP PREBIAS/PNP 6TSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 PNP Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 1.8A
- Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 200 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 130MHz
- Power - Max : 760mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : 6-TSOP
| 196 More on Order |
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| DCX100NS-7 Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT563 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 50mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms, 1kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 33 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 337 More on Order |
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| NSVIMD10AMT1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased SURF MT BIASED RES XSTR - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : Automotive, AEC-Q101
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 13kOhms, 130Ohms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V / 68 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 285mW
- Mounting Type : Surface Mount
- Package / Case : SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package : SC-74R
| 299 More on Order |
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| NSBC114TDXV6T1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.5W SOT563 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 500mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 280 More on Order |
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| RN2606(TE85L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SM6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SM6
| 203 More on Order |
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| RN4609(TE85L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W SM6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SM6
| 456 More on Order |
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| RN1610(TE85L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SM6
| 396 More on Order |
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| RN1508(TE85L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74A, SOT-753
- Supplier Device Package : SMV
| 422 More on Order |
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| RN2605(TE85L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SM6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SM6
| 328 More on Order |
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