Bipolar (BJT) - Arrays, Pre-Biased

Showing 1,041-1,060 of 1,584 items.

Part Number	Description	In Stock
RN2608(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	305 More on Order
RN2708JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	132 More on Order
RN2502(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SMV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74A, SOT-753 Supplier Device Package : SMV	288 More on Order
RN2965(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	419 More on Order
RN2707JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	382 More on Order
RN1703JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	203 More on Order
RN2710JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	470 More on Order
RN2701JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	115 More on Order
RN1701JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	462 More on Order
RN2705JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	477 More on Order
RN2704JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	438 More on Order
DMG564H30R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms, 1kOhms Resistor - Emitter Base (R2) : 47kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	250 More on Order
DMG214010R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PNP PREBIAS/NPN 0.3W MINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 PNP Pre-Biased, 1 NPN Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Emitter Base (R2) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 10V / 210 @ 2mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) : 500nA, 100µA Frequency - Transition : 150MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SOT-23-6 Supplier Device Package : Mini6-G4-B	122 More on Order
DMA564010R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	433 More on Order
DMC561040R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W SMINI5 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD (5 Leads), Flat Lead Supplier Device Package : SMini5-F3-B	463 More on Order
DMG564010R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	371 More on Order
DMG564060R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	100 More on Order
DMA566040R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	309 More on Order
DMA564020R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	103 More on Order
DMC564030R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	126 More on Order