| UMA9NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP UMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : UMT5
| 456 More on Order |
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| UP0431400L Panasonic Electronic Components | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6 - Manufacturer : Panasonic Electronic Components
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 150MHz, 80MHz
- Power - Max : 125mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SSMINI6-F1
| 198 More on Order |
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| IMB2AT110 Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SMT6
| 363 More on Order |
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| DDA143TH-7 Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 2.5mA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 422 More on Order |
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| DIMD10A-7 Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W SC74R - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms, 100Ohms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz, 200MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SC-74R
| 286 More on Order |
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| DDC142TH-7 Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W SOT563 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 470Ohms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Frequency - Transition : 200MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 295 More on Order |
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| DDA114EH-7 Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.15W SOT563 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 218 More on Order |
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| EMD4DXV6T1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms, 10kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 500mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 476 More on Order |
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| NSBC143ZPDXV6T1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 500mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 231 More on Order |
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| NSBC124EPDXV6T1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 500mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 345 More on Order |
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| IMH23T110 Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 600mA
- Voltage - Collector Emitter Breakdown (Max) : 20V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 820 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 2.5mA, 50mA
- Frequency - Transition : 150MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SMT6
| 383 More on Order |
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| UMC4N-7 Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT353 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms, 10kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : SOT-353
| 384 More on Order |
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| RN1905(T5L,F,T) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : US6
| 138 More on Order |
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| IMH5AT108 Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SMT6
| 419 More on Order |
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| UMH2N-TP Micro Commercial Co | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W SOT363 - Manufacturer : Micro Commercial Co
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : SOT-363
| 449 More on Order |
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| RN1909(T5L,F,T) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : US6
| 232 More on Order |
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| UMC2NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W UMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 30mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : UMT5
| 284 More on Order |
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| RN1908(T5L,F,T) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : US6
| 394 More on Order |
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| RN2906FE(TE85L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6 - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 100mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : ES6
| 351 More on Order |
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| XN0438100L Panasonic Electronic Components | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W MINI6 - Manufacturer : Panasonic Electronic Components
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms, 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 50 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA / 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) : 500nA, 1µA
- Frequency - Transition : 150MHz, 200MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SOT-23-6
- Supplier Device Package : MINI6-G1
| 418 More on Order |
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