Bipolar (BJT) - Arrays, Pre-Biased

Showing 1,121-1,140 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
UMA9NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP UMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : UMT5
456
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UP0431400L
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SSMINI6
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 150MHz, 80MHz
  • Power - Max : 125mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SSMINI6-F1
198
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IMB2AT110
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SMT6
363
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DDA143TH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 2.5mA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
422
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DIMD10A-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.3W SC74R
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms, 100Ohms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 200MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SC-74R
286
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DDC142TH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 470Ohms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Frequency - Transition : 200MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
295
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DDA114EH-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.15W SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
218
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EMD4DXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
476
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NSBC143ZPDXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
231
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NSBC124EPDXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
345
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IMH23T110
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL NPN SMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 600mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 820 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 2.5mA, 50mA
  • Frequency - Transition : 150MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SMT6
383
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UMC4N-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT353
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : SOT-353
384
More on Order
RN1905(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
138
More on Order
IMH5AT108
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL NPN SMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SMT6
419
More on Order
UMH2N-TP
Micro Commercial Co
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W SOT363
  • Manufacturer : Micro Commercial Co
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
449
More on Order
RN1909(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
232
More on Order
UMC2NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.15W UMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 30mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : UMT5
284
More on Order
RN1908(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
394
More on Order
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.1W ES6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : ES6
351
More on Order
XN0438100L
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.3W MINI6
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 50 @ 100mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA / 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max) : 500nA, 1µA
  • Frequency - Transition : 150MHz, 200MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-23-6
  • Supplier Device Package : MINI6-G1
418
More on Order
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