Bipolar (BJT) - Arrays, Pre-Biased

Showing 1,161-1,180 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
DMG264040R
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.3W MINI6
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-23-6
  • Supplier Device Package : Mini6-G4-B
449
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DMA264020R
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP MINI6
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-23-6
  • Supplier Device Package : Mini6-G4-B
324
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PQMD12Z
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.35W 6DFN
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 230MHz, 180MHz
  • Power - Max : 350mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-XFDFN Exposed Pad
  • Supplier Device Package : DFN1010B-6
172
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DMA261060R
Panasonic Electronic Components
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP MINI5
  • Manufacturer : Panasonic Electronic Components
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74A, SOT-753
  • Supplier Device Package : Mini5-G3-B
327
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RN4606(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.3W SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100µA (ICBO)
  • Frequency - Transition : 200MHz, 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
270
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IMH14AT108
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL NPN SMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SMT6
381
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UMC5NQ-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
PREBIASTRANSISTORSOT353
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : Automotive, AEC-Q101
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Frequency - Transition : 250MHz
  • Power - Max : 290mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : SOT-353
360
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FMA2AT148
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS DUAL PNP SMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74A, SOT-753
  • Supplier Device Package : SMT5
398
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RN4603(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.3W SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz, 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
481
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UMG9NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W UMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : UMT5
468
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UMH2NTN
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W UMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : UMT6
168
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EMG6T2R
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.15W EMT5
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package : EMT5
268
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EMG2DXV5T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.23W SOT553
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 230mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-553
  • Supplier Device Package : SOT-553
185
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UMF5NTR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 0.15W UMT6
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 12V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V / 270 @ 10mA, 2V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz, 260MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : UMT6
100
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RN1904,LF(CT
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
225
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NSBC114EPDP6T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS SOT963
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 339mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-963
  • Supplier Device Package : SOT-963
210
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DEMD48-7
Diodes Incorporated
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V / 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
2548
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PBLS1501Y,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 6TSSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 15V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max) : 1µA, 100nA
  • Frequency - Transition : 280MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : 6-TSSOP
305
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PBLS1504Y,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 6TSSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 15V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max) : 1µA, 100nA
  • Frequency - Transition : 280MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : 6-TSSOP
403
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NSVUMC5NT2G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.15W SC88
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms, 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms, 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package : SC-88A (SC-70-5/SOT-353)
288
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