| EMH61T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 50mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 138 More on Order |
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| EMD62T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 261 More on Order |
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| PBLS1502Y,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V, 15V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 280MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : 6-TSSOP
| 281 More on Order |
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| EMH75T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 399 More on Order |
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| EMD59T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 269 More on Order |
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| NSBA144EDP6T5G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.408W SOT963 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 408mW
- Mounting Type : Surface Mount
- Package / Case : SOT-963
- Supplier Device Package : SOT-963
| 121 More on Order |
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| EMB61T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 50mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 333 More on Order |
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| EMB51T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 30mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22kOhms
- Resistor - Emitter Base (R2) : 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 238 More on Order |
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| DDC115EU-7-F Diodes Incorporated | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W SOT363 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 100kOhms
- Resistor - Emitter Base (R2) : 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : SOT-363
| 259 More on Order |
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| UMG11NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W UMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : UMT5
| 447 More on Order |
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| UMA5NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP UMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : UMT5
| 411 More on Order |
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| PBLS2003D,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max) : 50V, 20V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V / 220 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 185MHz
- Power - Max : 600mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : 6-TSOP
| 344 More on Order |
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| PBLS6001D,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 700mA
- Voltage - Collector Emitter Breakdown (Max) : 50V, 60V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V / 150 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max) : 1µA, 100nA
- Frequency - Transition : 185MHz
- Power - Max : 600mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : 6-TSOP
| 273 More on Order |
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| PBLS4005Y,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V, 40V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) : 1µA
- Frequency - Transition : 300MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : 6-TSSOP
| 485 More on Order |
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| UMG8NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W UMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : UMT5
| 173 More on Order |
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| UMH6NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W UMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : UMT6
| 302 More on Order |
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| PEMH20,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-666
| 458 More on Order |
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| NSBC115EDXV6T1G ON Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.5W SOT563 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 100kOhms
- Resistor - Emitter Base (R2) : 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 500mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-563
| 144 More on Order |
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| PEMD12,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : SOT-666
| 216 More on Order |
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| EMD6FHAT2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased PNP+NPN DIGITAL TRANSISTOR (CORR - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : Automotive, AEC-Q101
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 176 More on Order |
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