Bipolar (BJT) - Arrays, Pre-Biased

Showing 1,361-1,380 of 1,584 items.

Part Number	Description	In Stock
EMC5DXV5T1G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT553 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms, 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 500mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : SOT-553	5595 More on Order
RN1607(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	4667 More on Order
RN4611(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	4448 More on Order
RN4610(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	4111 More on Order
RN4607(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	4510 More on Order
RN2971(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	3925 More on Order
RN2969(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : US6	3877 More on Order
RN2967(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : US6	4602 More on Order
RN2604(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	4587 More on Order
RN2603(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	4606 More on Order
RN1970(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	4347 More on Order
RN1968(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	3885 More on Order
RN1963(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	3918 More on Order
RN1961(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	4347 More on Order
RN1611(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	4790 More on Order
RN2510(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SMV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74A, SOT-753 Supplier Device Package : SMV	4781 More on Order
RN1702JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	4810 More on Order
RN2713JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	5412 More on Order
RN2712JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	5570 More on Order
RN2711JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ESV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-553 Supplier Device Package : ESV	5217 More on Order