Bipolar (BJT) - Single, Pre-Biased

Showing 2,321-2,340 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
RN2103(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.1W SSM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : SSM
305
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DTB123ECT116
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
PNP -500MA/-50V DIGITAL TRANSIST
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 39 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SST3
296
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DTA114EM3T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 260MW SOT723
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 260mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : SOT-723
363
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DTD143ECT116
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
NPN 500MA/50V DIGITAL TRANSISTOR
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 47 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SST3
332
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DTD113ECT116
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
NPN 500MA/50V DIGITAL TRANSISTOR
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SST3
238
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DTD123TCT116
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
NPN 500MA/50V DIGITAL TRANSISTOR
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SST3
262
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DTC114YM3T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 260MW SOT723
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 260mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : SOT-723
130
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DTB113ECT116
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
PNP -500MA/-50V DIGITAL TRANSIST
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SST3
215
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DTD114GCT116
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
NPN 500MA/50V DIGITAL TRANSISTOR
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SST3
383
More on Order
RN2108(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.1W SSM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : SSM
221
More on Order
DTC115EM3T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 260MW SOT723
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 100 kOhms
  • Resistor - Emitter Base (R2) : 100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 260mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : SOT-723
382
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DTC123JM3T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 260MW SOT723
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 260mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : SOT-723
282
More on Order
DTC144EM3T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 260MW SOT723
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 260mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : SOT-723
282
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DTC143XMT2L
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 150MW VMT3
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : VMT3
463
More on Order
DTC123EM3T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 260MW SOT723
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 260mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : SOT-723
266
More on Order
DTA143ZM3T5G
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 260MW SOT723
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 260mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : SOT-723
259
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RN2307(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.1W USM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : USM
402
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FJN4305RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
438
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RN2303(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.1W USM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : USM
4196
More on Order
RN2311(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.1W USM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : USM
469
More on Order
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