Bipolar (BJT) - Single, Pre-Biased

Showing 2,341-2,360 of 3,282 items.

Part Number	Description	In Stock
RN2309(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	295 More on Order
RN2308(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	362 More on Order
RN1313(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.15W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	390 More on Order
RN2119MFV(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.15W VESM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	459 More on Order
RN2118MFV(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.15W VESM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	172 More on Order
SMUN5211T3G ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 202MW SC70-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 202mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SC-70-3 (SOT323)	385 More on Order
UNR723100L Panasonic Electronic Components	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 1W MINIP3 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 700mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 800 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic : 400mV @ 5mA, 500mA Current - Collector Cutoff (Max) : 10µA Frequency - Transition : 55MHz Power - Max : 1W Mounting Type : Surface Mount Package / Case : TO-243AA Supplier Device Package : MiniP3-F1	302 More on Order
UNR32A0G0L Panasonic Electronic Components	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 80mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 150MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : SSSMini3-F1	305 More on Order
DDTB142JC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 470 Ohms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	458 More on Order
RN2317(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	144 More on Order
RN1310(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	173 More on Order
RN1318(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	173 More on Order
RN1312(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.15W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	494 More on Order
RN2314(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	127 More on Order
DDTB122TC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 220 Ohms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	392 More on Order
DTA015EUBTL Rohm Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.2W UMT3F Manufacturer : Rohm Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 20mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 100 kOhms Resistor - Emitter Base (R2) : 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-85 Supplier Device Package : UMT3F	173 More on Order
DDTC113TE-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SOT523 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-523 Supplier Device Package : SOT-523	305 More on Order
RN2316(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	445 More on Order
DTA114YM3T5G ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 260MW SOT723 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 260mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : SOT-723	286 More on Order
DTC123JM-TP Micro Commercial Co	Transistors-Bipolar (BJT) - Single, Pre-Biased NPNDIGITALTRANSISTORSSOT-723 Manufacturer : Micro Commercial Co Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : SOT-723	251 More on Order