Bipolar (BJT) - Single, Pre-Biased

Showing 1,241-1,260 of 3,282 items.

Part Number	Description	In Stock
RN2413TE85LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SMINI Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	490 More on Order
DDTD143TC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	372 More on Order
DDTD143EC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	380 More on Order
DDTD123EC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	275 More on Order
DDTD122JC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 220 Ohms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	273 More on Order
DDTD114TC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	338 More on Order
DDTD114GC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	364 More on Order
DDTD122LC-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 220 Ohms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	287 More on Order
BCR583E6327HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.33W SOT23-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	346 More on Order
BCR573E6327HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.33W SOT23-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	211 More on Order
BCR521E6327HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.33W SOT23-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 100MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	455 More on Order
BCR573E6433HTMA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	247 More on Order
BCR555E6433HTMA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	352 More on Order
BCR553E6327HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	413 More on Order
BCR523E6433HTMA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 100MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	226 More on Order
NSVMMUN2114LT3G ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PNP BIPO 50V SOT23-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 246mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3 (TO-236)	116 More on Order
PDTD143XTVL Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.425W Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 225MHz Power - Max : 320mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : TO-236AB	265 More on Order
PDTD143ETVL Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.425W Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 225MHz Power - Max : 320mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : TO-236AB	126 More on Order
PDTD114ETVL Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.425W Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 225MHz Power - Max : 320mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : TO-236AB	226 More on Order
PDTB143XTVL Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 140MHz Power - Max : 320mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : TO-236AB	350 More on Order