Bipolar (BJT) - Single, Pre-Biased

Showing 1,441-1,460 of 3,282 items.

Part Number	Description	In Stock
ADTC114EUAQ-7 Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms Frequency - Transition : 250MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SOT-323	416 More on Order
ADTA144EUAQ-7 Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms Frequency - Transition : 250MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SOT-323	156 More on Order
FJX3008RTF ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SC-70 (SOT323)	258 More on Order
FJX3007RTF ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SC-70 (SOT323)	113 More on Order
RN2405,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	256 More on Order
RN2403,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	315 More on Order
RN2402,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	393 More on Order
RN2401,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	455 More on Order
RN2302,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F USM TRANSISTOR PD 100MW Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	309 More on Order
RN1404,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	137 More on Order
RN1403,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	468 More on Order
RN1315,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F USM TRANSISTOR PD 100MW Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	254 More on Order
RN1311,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F USM TRANSISTOR PD 100MW Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	138 More on Order
RN1307,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F USM TRANSISTOR PD 100MW Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	347 More on Order
RN1304,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F USM PLN (LF) TRANSISTOR Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	382 More on Order
DDTC144WCA-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	207 More on Order
DDTC124GCA-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	450 More on Order
DDTC114GCA-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	128 More on Order
DDTA124TCA-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	164 More on Order
DDTA123YCA-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	145 More on Order