Bipolar (BJT) - Single, Pre-Biased

Showing 1,581-1,600 of 3,282 items.

Part Number	Description	In Stock
BCR141WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 130MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	166 More on Order
BCR135WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	290 More on Order
BCR133WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 130MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	285 More on Order
BCR129WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	339 More on Order
BCR119WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	467 More on Order
BCR116WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	252 More on Order
BCR112WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 140MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	482 More on Order
BCR108WH6433XTMA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 170MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	411 More on Order
BCR108WH6327XTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 170MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : PG-SOT323-3	140 More on Order
PDTA123JM,315 Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT883 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : DFN1006-3	243 More on Order
PDTC115EM,315 Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT883 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 20mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 100 kOhms Resistor - Emitter Base (R2) : 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : DFN1006-3	196 More on Order
RN2109MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	413 More on Order
RN1132MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 200 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	343 More on Order
RN1119MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	463 More on Order
RN1118MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	312 More on Order
RN1116MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	143 More on Order
RN1113MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	389 More on Order
RN1111MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM PLN (LF) TRANSISTO Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	453 More on Order
RN1117MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS NPN PREBIAS 50V 100MA VESM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	397 More on Order
RN1110MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.15W VESM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	131 More on Order