| PHP176NQ04T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 68.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 3620pF @ 25V
- Power Dissipation (Max) : 250W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 470 More on Order |
|
| PHP174NQ04LT,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 64nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 5345pF @ 25V
- Power Dissipation (Max) : 250W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 128 More on Order |
|
| PHP152NQ03LTA,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 25V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 36nC @ 5V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 3140pF @ 25V
- Power Dissipation (Max) : 150W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 270 More on Order |
|
| PHP14NQ20T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 14A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 230mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 25V
- Power Dissipation (Max) : 125W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 225 More on Order |
|
| PHP143NQ04T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 5.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 52nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2840pF @ 25V
- Power Dissipation (Max) : 200W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 215 More on Order |
|
| PHP129NQ04LT,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 44.2nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 3965pF @ 25V
- Power Dissipation (Max) : 200W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 487 More on Order |
|
| PHP119NQ06T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 7.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2820pF @ 25V
- Power Dissipation (Max) : 200W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 272 More on Order |
|
| PHP112N06T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 87nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4352pF @ 25V
- Power Dissipation (Max) : 200W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 157 More on Order |
|
| PHP110NQ06LT,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 45nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 3960pF @ 25V
- Power Dissipation (Max) : 200W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 418 More on Order |
|
| PHP101NQ04T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 36.6nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2020pF @ 25V
- Power Dissipation (Max) : 157W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 170 More on Order |
|
| PHP101NQ03LT,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 23nC @ 5V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2180pF @ 25V
- Power Dissipation (Max) : 166W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 369 More on Order |
|
| PHM30NQ10T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 37.6A 8HVSON - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 37.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 20mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 53.7nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 3600pF @ 25V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-HVSON (6x5)
- Package / Case : 8-VDFN Exposed Pad
| 388 More on Order |
|
| PHM25NQ10T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 30.7A 8HVSON - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 30.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 30mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 26.6nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 20V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-HVSON (6x5)
- Package / Case : 8-VDFN Exposed Pad
| 376 More on Order |
|
| PHM21NQ15T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 150V 22.2A 8HVSON - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 150V
- Current - Continuous Drain (Id) @ 25°C : 22.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 55mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 36.2nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2080pF @ 25V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-HVSON (6x5)
- Package / Case : 8-VDFN Exposed Pad
| 413 More on Order |
|
| PHM18NQ15T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 150V 19A SOT685-1 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 150V
- Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 75mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 26.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 25V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-HVSON (6x5)
- Package / Case : 8-VDFN Exposed Pad
| 140 More on Order |
|
| PHM15NQ20T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 17.5A 8HVSON - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 85mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2170pF @ 30V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-HVSON (6x5)
- Package / Case : 8-VDFN Exposed Pad
| 444 More on Order |
|
| PHM12NQ20T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 14.4A 8HVSON - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 14.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 130mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1230pF @ 25V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-HVSON (6x5)
- Package / Case : 8-VDFN Exposed Pad
| 337 More on Order |
|
| PHK4NQ20T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 4A SOT96-1 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 130mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1230pF @ 25V
- Power Dissipation (Max) : 6.25W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SO
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 391 More on Order |
|
| PHK4NQ10T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V SOT96-1 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 70mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 880pF @ 25V
- Power Dissipation (Max) : 2.5W (Ta)
- Operating Temperature : -65°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SO
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 476 More on Order |
|
| PHK12NQ10T,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 11.6A SOT96-1 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 11.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1965pF @ 25V
- Power Dissipation (Max) : 8.9W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SO
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 350 More on Order |
|