FETs, MOSFETs - Single

Showing 21-40 of 29,932 items.

Part Number	Description	In Stock
AO3400A_101 Alpha & Omega Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V SOT23 Manufacturer : Alpha & Omega Semiconductor Warranty : Up to 1 year [Limited-Warranty]*	324 More on Order
IPD60R800CEATMA1 Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 600V TO-252-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : CoolMOS™ CE FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 800mOhm @ 2A, 10V Vgs(th) (Max) @ Id : 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs : 17.2nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 373pF @ 100V Power Dissipation (Max) : 48W (Tc) Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TO-252-3 Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63	149 More on Order
IRFP150N Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 42A TO-247AC Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 36mOhm @ 23A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 25V Power Dissipation (Max) : 160W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247AC Package / Case : TO-247-3	249 More on Order
RRH100P03GZETB Rohm Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET P-CH 30V 10A SOP8 Manufacturer : Rohm Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 12.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 3600pF @ 10V Power Dissipation (Max) : 650mW (Ta) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-SOP Package / Case : 8-SOIC (0.154", 3.90mm Width)	4391 More on Order
IRF4905PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET P-CH 55V 74A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 20mOhm @ 38A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 3400pF @ 25V Power Dissipation (Max) : 200W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	62590 More on Order
SISS26LDN-T1-GE3 Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 81.2A PP 1212-8S Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchFET® Gen IV FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 23.7A (Ta), 81.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 4.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1980pF @ 30V Power Dissipation (Max) : 4.8W (Ta), 57W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PowerPAK® 1212-8S Package / Case : PowerPAK® 1212-8S	139 More on Order
RSR010N10TL Rohm Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 1.0A TSMT3 Manufacturer : Rohm Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 520mOhm @ 1A, 10V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 5V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V Power Dissipation (Max) : 540mW (Ta) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TSMT3 Package / Case : SC-96	9101 More on Order
TK2P60D(TE16L1,NQ) Toshiba Semiconductor and Storage	Transistors-FETs, MOSFETs - Single MOSFET N-CH 600V 2A PW-MOLD Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Series : π-MOSVII FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 4.3Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 25V Power Dissipation (Max) : 60W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PW-MOLD Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63	304 More on Order
CSD18543Q3AT Texas Instruments	Transistors-FETs, MOSFETs - Single 60V N-CHANNEL NEXFET POWER MOSF Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* Series : NexFET™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 15.6mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id : 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 30V Power Dissipation (Max) : 66W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-VSON (3.3x3.3) Package / Case : 8-PowerVDFN	49608 More on Order
ZXMN6A07FTA Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 1.2A SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 250mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V Power Dissipation (Max) : 625mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 Package / Case : TO-236-3, SC-59, SOT-23-3	224371 More on Order
AO3422 Alpha & Omega Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 2.1A SOT23 Manufacturer : Alpha & Omega Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V Rds On (Max) @ Id, Vgs : 160mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id : 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 3.3nC @ 4.5V Vgs (Max) : ±12V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V Power Dissipation (Max) : 1.25W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3L Package / Case : TO-236-3, SC-59, SOT-23-3	818417 More on Order
CSD17573Q5B Texas Instruments	Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 100A 8VSON Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* Series : NexFET™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 1mOhm @ 35A, 10V Vgs(th) (Max) @ Id : 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 64nC @ 4.5V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 9000pF @ 15V Power Dissipation (Max) : 3.2W (Ta), 195W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-VSON-CLIP (5x6) Package / Case : 8-PowerTDFN	25345 More on Order
ZXMP10A13FTA Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 0.6A SOT23-3 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V Rds On (Max) @ Id, Vgs : 1Ohm @ 600mA, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 141pF @ 50V Power Dissipation (Max) : 625mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 Package / Case : TO-236-3, SC-59, SOT-23-3	414997 More on Order
NTR4101PT1G ON Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A SOT-23 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 20V Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V Rds On (Max) @ Id, Vgs : 85mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id : 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 4.5V Vgs (Max) : ±8V Input Capacitance (Ciss) (Max) @ Vds : 675pF @ 10V Power Dissipation (Max) : 420mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 (TO-236) Package / Case : TO-236-3, SC-59, SOT-23-3	118533 More on Order
STW4N150 STMicroelectronics	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 4A TO-247 Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : PowerMESH™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 7Ohm @ 2A, 10V Vgs(th) (Max) @ Id : 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V Power Dissipation (Max) : 160W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3	3635 More on Order
NDS8410 Texas Instruments	Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8-SOIC Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V Vgs (Max) : 20V Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 15V Power Dissipation (Max) : 2.5W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-SOIC Package / Case : 8-SOIC (0.154", 3.90mm Width)	456 More on Order
ZXM64P03XTA Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET P-CH 30V 3.8A 8-MSOP Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 75mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 825pF @ 25V Power Dissipation (Max) : 1.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-MSOP Package / Case : 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	2940 More on Order
STH3N150-2 STMicroelectronics	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A H2PAK-2 Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : PowerMESH™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id : 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 29.3nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 939pF @ 25V Power Dissipation (Max) : 140W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : H²PAK Package / Case : TO-263-3, D²Pak (2 Leads + Tab) Variant	7797 More on Order
IRF1407PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 130A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 75V Current - Continuous Drain (Id) @ 25°C : 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 7.8mOhm @ 78A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 250nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 5600pF @ 25V Power Dissipation (Max) : 330W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	2668 More on Order
IRF9Z34NPBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET P-CH 55V 19A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 100mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V Power Dissipation (Max) : 68W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	18756 More on Order