Bipolar (BJT) - Single, Pre-Biased

Showing 161-180 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
RN2109CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
396
More on Order
RN2108CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
388
More on Order
RN2107CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
194
More on Order
RN2106CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
208
More on Order
RN2105CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
301
More on Order
RN2104CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
160
More on Order
RN2103CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
205
More on Order
RN2102CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
259
More on Order
RN2101CT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 0.05W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 20V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 50mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
407
More on Order
RN1110(T5L,F,T)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W SSM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : SSM
207
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RN1112ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
312
More on Order
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
278
More on Order
RN1109ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
187
More on Order
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
475
More on Order
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
221
More on Order
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
257
More on Order
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
329
More on Order
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
192
More on Order
RN1102ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
481
More on Order
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 0.1W CST3
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 80mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : CST3
336
More on Order
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