RN1112ACT(TPL3)

Part Number
RN1112ACT(TPL3)
Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors
Description
TRANS PREBIAS NPN 0.1W CST3
RN1112ACT(TPL3) Specifications
RoHS No RoHS Information
EDA/CAD Models RN1112ACT(TPL3) PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Toshiba Semiconductor and Storage
Product Line Semiconductors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Series -
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 80mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition -
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package CST3
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