BSM120D12P2C005

Part Number
BSM120D12P2C005
Manufacturer
Rohm Semiconductor
Category
Transistors
Description
MOSFET 2N-CH 1200V 120A MODULE
BSM120D12P2C005 Specifications
RoHS No RoHS Information
EDA/CAD Models BSM120D12P2C005 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Rohm Semiconductor
Product Line Semiconductors
Subcategory FETs, MOSFETs - Arrays
Series -
FET Type 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Power - Max 780W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type -
Package / Case Module
Supplier Device Package Module
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In Stock527 - More on Order
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