HN4B01JE(TE85L,F)

Part Number
HN4B01JE(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors
Description
TRANS NPN/PNP 50V 0.15A ESV PLN
HN4B01JE(TE85L,F) Specifications
RoHS No RoHS Information
EDA/CAD Models HN4B01JE(TE85L,F) PCB Footprint and Symbol
Brand Toshiba Semiconductor and Storage
Product Line Semiconductors
Subcategory Bipolar (BJT) - Arrays
Series -
Transistor Type NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10MA, 100MA
Power - Max 100mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV
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In Stock146 - More on Order
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