| RoHS |
No RoHS Information
|
| EDA/CAD Models |
IPG20N10S4L35ATMA1 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
Infineon Technologies |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Arrays |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| FET Type |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
20A |
| Rds On (Max) @ Id, Vgs |
35mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 16µA |
| Gate Charge (Qg) (Max) @ Vgs |
17.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1105pF @ 25V |
| Power - Max |
43W |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Supplier Device Package |
PG-TDSON-8-4 |
