IRFHM8363TR2PBF
| Part Number | IRFHM8363TR2PBF |
| Manufacturer | Infineon Technologies |
| Category | Transistors |
| Description | MOSFET 2N-CH 30V 11A 8PQFN |
IRFHM8363TR2PBF Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | IRFHM8363TR2PBF PCB Footprint and Symbol |
| Brand | Infineon Technologies |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | HEXFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
| Power - Max | 2.7W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
Quick Inquiry
| In Stock | 422 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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