MT3S111P(TE12L,F)
| Part Number | MT3S111P(TE12L,F) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Transistors |
| Description | RF TRANS NPN 6V 8GHZ PW-MINI |
MT3S111P(TE12L,F) Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | MT3S111P(TE12L,F) PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Semiconductor and Storage |
| Product Line | Semiconductors |
| Subcategory | Bipolar (BJT) - RF |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Gain | 10.5dB |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | PW-MINI |
Quick Inquiry
| In Stock | 8247 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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