| RoHS |
No RoHS Information
|
| EDA/CAD Models |
PHN210,118 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
NXP |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Arrays |
| Series |
TrenchMOS™ |
| FET Type |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
- |
| Rds On (Max) @ Id, Vgs |
100mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 20V |
| Power - Max |
2W |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SO |
