RN1427TE85LF
| Part Number | RN1427TE85LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Transistors |
| Description | TRANS PREBIAS NPN 200MW SMINI |
RN1427TE85LF Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | RN1427TE85LF PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Semiconductor and Storage |
| Product Line | Semiconductors |
| Subcategory | Bipolar (BJT) - Single, Pre-Biased |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 300MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
Quick Inquiry
| In Stock | 185 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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