SI3900DV-T1-E3
| Part Number | SI3900DV-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Transistors |
| Description | MOSFET 2N-CH 20V 2A 6-TSOP |
SI3900DV-T1-E3 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | SI3900DV-T1-E3 PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Vishay Siliconix |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 830mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
Quick Inquiry
| In Stock | 66676 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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