SI4931DY-T1-GE3
| Part Number | SI4931DY-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Transistors |
| Description | MOSFET 2P-CH 12V 6.7A 8SOIC |
SI4931DY-T1-GE3 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | SI4931DY-T1-GE3 PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Vishay Siliconix |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 350µA |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
Quick Inquiry
| In Stock | 23916 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Please fill out the form below. We will contact you as soon as possible.
Add to cart
You can first add the current product to the shopping cart and then make a one-time inquiry.