TH58NYG2S3HBAI6
| Part Number | TH58NYG2S3HBAI6 |
| Manufacturer | Toshiba Memory America, Inc. |
| Category | Memory ICs |
| Description | 4GB SLC NAND 24NM BGA 6.5X8 (EEP |
TH58NYG2S3HBAI6 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | TH58NYG2S3HBAI6 PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Memory America, Inc. |
| Product Line | Semiconductors |
| Subcategory | Memory |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | - |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-BGA |
| Supplier Device Package | 63-BGA (9x11) |
Quick Inquiry
| In Stock | 387 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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